InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy

被引：111

作者：

Kuramata, A

Domen, K

Soejima, R

Horino, K

Kubota, S

Tanahashi, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期

关键词：

GaN; InGaN; multiple quantum well; laser diode; SiC; low pressure metal organic vapor phase epitaxy;

D O I：

10.1143/JJAP.36.L1130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multiple quantum well (MQW) laser diodes mere fabricated on (0001)Si oriented 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy (LP-MOVPE). The laser oscillation was observed above the threshold current of 800 mA at a peak wavelength of 414.3 nm under pulsed current injection at room-temperature. The pulse duration was 300 ns and the repetition frequency was 1 kHz, The threshold current density and differential efficiency were estimated to be 16 kA/cm(2) and 0.03 W/A, respectively. The full width at half maximum (FWHM) of the lasing emission lines was between 0.03 nm and 0.21 nm. Streak-shaped far field patterns mere clearly observable. The lifetime of the laser diode was more than 5 hours.

引用

页码：L1130 / L1132

页数：3

共 10 条

[1] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[2]

Amano H, 1996, MATER RES SOC SYMP P, V395, P869

[3]

BULMAN GE, 1997, DEVICE RES C

[4] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[5]

KURAMATA A, 1996, P INT S BLUE LAS LIG, P80

[6] Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (20) :3034-3036

[7] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[8] Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates [J].

Shan, W ;

Fischer, AJ ;

Song, JJ ;

Bulman, GE ;

Kong, HS ;

Leonard, MT ;

Perry, WG ;

Bremser, MD ;

Davis, RF .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :740-742

[9] Structural defects in alpha-SiC single crystals grown by the modified-Lely method [J].

Takahashi, J ;

Ohtani, N ;

Kanaya, M .

JOURNAL OF CRYSTAL GROWTH, 1996, 167 (3-4) :596-606

[10] SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC [J].

ZUBRILOV, AS ;

NIKOLAEV, VI ;

TSVETKOV, DV ;

DMITRIEV, VA ;

IRVINE, KG ;

EDMOND, JA ;

CARTER, CH .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :533-535

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