Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode

被引：46

作者：

Kobayashi, T ^{[1
]}

Nakamura, F ^{[1
]}

Naganuma, K ^{[1
]}

Tojyo, T ^{[1
]}

Nakajima, H ^{[1
]}

Asatsuma, T ^{[1
]}

Kawai, H ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Corp, Res Ctr, Hodogaya Ku, Yokohama, Kanagawa 2400031, Japan

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 15期

关键词：

D O I：

10.1049/el:19981063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous-wave operation at room temperature was demonstrated in a GaInN/GaN multiquantum well (MQW) laser grown by metal organic chemical vapour deposition (MOCVD) using a horizontal reactor. The laser structure was grown a (0001) c-plane sapphire substrate. A 1 mm long cavity with a 4 mu m wide ridge stripe was formed by cleaving along the (11-20) plane of the GaInN/GaN epitaxial layers. Stimulated emission was observed at a wavelength of 411 nm with a threshold current density of 11.7kA/cm(2).

引用

页码：1494 / 1495

页数：2