InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

被引：727

作者：

Nakamura, S ^{[1
]}

Senoh, M ^{[1
]}

Nagahama, S ^{[1
]}

Iwasa, N ^{[1
]}

Yamada, T ^{[1
]}

Matsushita, T ^{[1
]}

Kiyoku, H ^{[1
]}

Sugimoto, Y ^{[1
]}

Kozaki, T ^{[1
]}

Umemoto, H ^{[1
]}

Sano, M ^{[1
]}

Chocho, K ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.120688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation. After 4 mu m etching of the ELOG substrate, the etch pit density was about 2x10(8) cm(2) in the region of the 4-mu m-wide stripe window, but almost zero in the region of the 7-mu m-wide SiO2 stripe. (C) 1998 American Institute of Physics.

引用

页码：211 / 213

页数：3

共 12 条

[1] Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
Bulman, GE
Doverspike, K
Sheppard, ST
Weeks, TW
Kong, HS
Dieringer, HM
Edmond, JA
Brown, JD
Swindell, JT
Schetzina, JF
[J]. ELECTRONICS LETTERS, 1997, 33 (18) : 1556 - 1557
[2] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates
Itaya, K
Onomura, M
Nishio, J
Sugiura, L
Saito, S
Suzuki, M
Rennie, J
Nunoue, SY
Yamamoto, M
Fujimoto, H
Kokubun, Y
Ohba, Y
Hatakoshi, G
Ishikawa, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B): : L1315 - L1317
[3] PREPARATION OF ALXGA1-XN/GAN HETEROSTRUCTURE BY MOVPE
ITO, K
HIRAMATSU, K
AMANO, H
AKASAKI, I
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) : 533 - 538
[4] SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
KATO, Y
KITAMURA, S
HIRAMATSU, K
SAWAKI, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) : 133 - 140
[5] PHOTOLUMINESCENCE CHARACTERISTICS OF ALGAN-GAN-ALGAN QUANTUM-WELLS
KHAN, MA
SKOGMAN, RA
VANHOVE, JM
KRISHNANKUTTY, S
KOLBAS, RM
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1257 - 1259
[6] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125
[7] Nakamura S, 1997, MRS INTERNET J N S R, V2
[8] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Sugimoto, Y
Kiyoku, H
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (11) : 1417 - 1419
[9] Nakamura S., 1997, BLUE LASER DIODE GAN
[10] NAM OH, 1997, 39 EL MAT C D5 JUN 2

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