GaN based laser diode with focused ion beam etched mirrors

被引：48

作者：

Katoh, H

Takeuchi, T

Anbe, C

Mizumoto, R

Yamaguchi, S

Wetzel, C

Amano, H

Akasaki, I

Kaneko, Y

Yamada, N

机构：

[1] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[2] Hewlett Packard Labs, Takatsu Ku, Kanagawa 2130012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 4B期

关键词：

GaN based laser diode; focused ion beam etching; Fabry-Perot resonator mirror;

D O I：

10.1143/JJAP.37.L444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GaN based laser diode with Fabry-Perot resonator mirrors Fabricated by focused ion beam etching was demonstrated For the first time. It shows lasing by pulsed current injection at room temperature. The threshold current and the lasing wavelength are 0.75 A and around 410 nm, respectively.

引用

页码：L444 / L446

页数：3

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