A comparative EPR study of ion implantation induced damage in Si, Si1-xGex(x not equal 0) and SiC

Electron Paramagnetic Resonance (EPR) measurements have been made to investigate the build up of damage in silicon, in relaxed crystalline Si1-xGex (x = 0.04, 0.13, 0.24, 0.36) and in 6H-SiC as a result of increasing: the ion dose from low levels (similar to 10(12) cm(-2)) up to values(similar to 10(15) cm(-2)) sufficient to produce an amorphous layer. Si, Si1-xGex (x not equal 0) and SIC were implanted at room temperature with 1.5 MeV Si, 2 MeV Si and 0.2 MeV Ge ions respectively. A comparison is made between the ways in which the type and population of paramagnetic defects depend on ion dose for each material.