Intrinsic and extrinsic capacitances of in-plane-gated transistors

被引：27

作者：

deVries, DK ^{[1
]}

Stelmaszyk, P ^{[1
]}

Wieck, AD ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,LEHRSTUHL ANGEW FESTKORPERPHYS,D-44780 BOCHUM,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.362364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The intrinsic and extrinsic capacitances of in-plane-gated (IPG) transistors are calculated by conformal mapping. The capacitance per unit length between coplanar areas is only weakly dependent on the separation. It is essentially determined by the dielectric constant only and has a value of similar to 18 pF/m in air. In both ion-implanted and trench-etched IPG transistors the geometry is of minor importance for the low- and high-frequency behavior. (C) 1996 American Institute of Physics.

引用

页码：8087 / 8090

页数：4

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