Activation of dopant in the p-layer of amorphous silicon solar cells under illumination

被引：6

作者：

Caputo, D

deCesare, G

机构：

[1] Department of Electronic Engineering, University of Rome La Sapienza, 00184 Rome

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1996年 / 43卷 / 03期

关键词：

amorphous silicon; solar cells; dopant activation; degradation;

D O I：

10.1016/0927-0248(96)00005-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have investigated the effect of light-soaking on the p-doped layer of amorphous silicon (a-Si:H) solar cells by low temperature (50-300 K) AC conductance measurements. The experimental results are interpreted on the basis of an equilibration model of the doped material. The model takes into account the finite dimension of the layer and its presence inside a complex structure. It is shown that the Fermi level shifts after light soaking, which can result in activation of the doping impurities.

引用

页码：263 / 272

页数：10

共 14 条

[1] POTENTIAL FLUCTUATIONS DUE TO INHOMOGENEITY IN HYDROGENATED AMORPHOUS-SILICON AND THE RESULTING CHARGED DANGLING-BOND DEFECTS [J].