DAMAGE CONTROL AT THE SNO2/SI INTERFACE IN OPTOELECTRONIC AMORPHOUS-SILICON DEVICES - AN AUGER AND ELECTRICAL STUDY

被引：11

作者：

GRILLO, G

CONTE, G

DELLASALLA, D

GALLUZZI, F

GRAMACCIONI, C

TOMACIELLO, R

VITTORI, V

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2829 / 2833

页数：5

共 13 条

[1] EVIDENCE FOR A SOLID-STATE REACTION AT THE A-SI-SNOX INTERFACE - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY [J].

BADRINARAYANAN, S ;

SINHA, S ;

SINHA, APB .

THIN SOLID FILMS, 1986, 144 (01) :133-137

[2]

Conte G., 1988, Eighth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference (EUR 11780), P1647

[3]

EDGELL RG, 1987, SURF SCI, V192, P265

[4]

ESEN E, 1987, 7TH P EC PHOT SOL EN, P560

[5]

KITAGAWA M, 1983, J APPL PHYS, V54

[6]

KUBOI O, 1981, JPN J APPL PHYS, V20, P1783

[7] AUGER AND ELECTRON-ENERGY LOSS SPECTROSCOPY OF OXYGEN-CHEMISORPTION ON TIN [J].

POWELL, RA .

APPLIED SURFACE SCIENCE, 1979, 2 (03) :397-415

[8] HYDROGEN PLASMA INTERACTIONS WITH TIN OXIDE SURFACES [J].

SCHADE, H ;

SMITH, ZE ;

THOMAS, JH ;

CATALANO, A .

THIN SOLID FILMS, 1984, 117 (02) :149-155

[9] SEMITRANSPARENT SILICIDE ELECTRODES UTILIZING INTERACTION BETWEEN HYDROGENATED AMORPHOUS-SILICON AND METALS [J].

SEKI, K ;

YAMAMOTO, H ;

SASANO, A ;

TSUKADA, T .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :682-683

[10] AUGER-ELECTRON AND X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSIS OF THE HYDROGENATED AMORPHOUS SILICON-TIN OXIDE INTERFACE - EVIDENCE OF A PLASMA-INDUCED REACTION [J].

THOMAS, JH ;

CATALANO, A .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :101-102

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