Planar Hall-effect magnetic random access memory

被引：50

作者：

Bason, Y ^{[1
]}

Klein, L

Yau, JB

Hong, X

Hoffman, J

Ahn, CH

机构：

[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2162824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We suggest a type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than the currently developed MRAM that is based on magnetoresistance tunnel junctions, with the tunnel junction structure being replaced by a single-layer film. (C) 2006 American Institute of Physics.

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页数：3

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