Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers

被引：143

作者：

Szczytko, J

Mac, W

Twardowski, A

Matsukura, F

Ohno, H

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[2] Tohoku Univ, Elect Commun Res Inst, Lab Elect Ingelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.59.12935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The s,p-d exchange interaction of p-type Ga1-xMnxAs (x<0.05) epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic p-d exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration. [S0163-1829(99)05020-1].

引用

页码：12935 / 12939

页数：5

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