Antiferromagnetic p-d exchange in ferromagnetic Ga1-xMnxAs epilayers

被引:143
作者
Szczytko, J
Mac, W
Twardowski, A
Matsukura, F
Ohno, H
机构
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] Tohoku Univ, Elect Commun Res Inst, Lab Elect Ingelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 20期
关键词
D O I
10.1103/PhysRevB.59.12935
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The s,p-d exchange interaction of p-type Ga1-xMnxAs (x<0.05) epilayers is investigated by means of magnetoabsorption. The observed ferromagnetic-type splitting of fundamental absorption edge is explained by antiferromagnetic p-d exchange interaction, taking into account the Moss-Burstein effect, resulting from high hole concentration. [S0163-1829(99)05020-1].
引用
收藏
页码:12935 / 12939
页数:5
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