DILUTED MAGNETIC III-V SEMICONDUCTORS

[1] ANDRIANOV DG, 1977, SOV PHYS SEMICOND+, V11, P738

[2] BEAM CP, 1962, PHYS REV, V126, P104

[3] SEMIMAGNETIC SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1984, 33 (03) : 193 - 256

[4] MANGANESE INCORPORATION BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4938 - 4942

[5] PARAMAGNETISM OF THE MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (32): : 5539 - 5545

[6] FURDYNA JK, 1986, SEMICONDUCTOR SEMIME, V25

[7] Ilegems M., 1975, J APPL PHYS, V46, P3059

[8] MORRISH AH, 1965, PHYSICAL PRINCIPLES, P67

[9] MAGNETIC-SUSCEPTIBILITY AND ELECTRON-PARAMAGNETIC-RES MEASUREMENTS IN CONCENTRATED SPIN-GLASSES - CD1-XMNXTE AND CD1-XMNXSE [J]. PHYSICAL REVIEW B, 1982, 25 (11): : 6584 - 6594

[10] ELECTRONIC-STRUCTURE OF THE NEUTRAL MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (02) : 240 - 243

[1] ANDRIANOV DG, 1977, SOV PHYS SEMICOND+, V11, P738

[2] BEAM CP, 1962, PHYS REV, V126, P104

[3] SEMIMAGNETIC SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1984, 33 (03) : 193 - 256

[4] MANGANESE INCORPORATION BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4938 - 4942

[5] PARAMAGNETISM OF THE MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (32): : 5539 - 5545

[6] FURDYNA JK, 1986, SEMICONDUCTOR SEMIME, V25

[7] Ilegems M., 1975, J APPL PHYS, V46, P3059

[8] MORRISH AH, 1965, PHYSICAL PRINCIPLES, P67

[9] MAGNETIC-SUSCEPTIBILITY AND ELECTRON-PARAMAGNETIC-RES MEASUREMENTS IN CONCENTRATED SPIN-GLASSES - CD1-XMNXTE AND CD1-XMNXSE [J]. PHYSICAL REVIEW B, 1982, 25 (11): : 6584 - 6594

[10] ELECTRONIC-STRUCTURE OF THE NEUTRAL MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (02) : 240 - 243