EPITAXY OF III-V DILUTED MAGNETIC SEMICONDUCTOR-MATERIALS

被引:59
作者
MUNEKATA, H
OHNO, H
VONMOLNAR, S
HARWIT, A
SEGMULLER, A
CHANG, LL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词
D O I
10.1116/1.584849
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:176 / 180
页数:5
相关论文
共 16 条
[1]  
ANDRIANOV DG, 1977, SOV PHYS SEMICOND+, V11, P738
[2]  
BEAM CP, 1962, PHYS REV, V126, P104
[3]   SEMIMAGNETIC SEMICONDUCTORS [J].
BRANDT, NB ;
MOSHCHALKOV, VV .
ADVANCES IN PHYSICS, 1984, 33 (03) :193-256
[4]   MANGANESE INCORPORATION BEHAVIOR IN MOLECULAR-BEAM EPITAXIAL GALLIUM-ARSENIDE [J].
DESIMONE, D ;
WOOD, CEC ;
EVANS, CA .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4938-4942
[5]   OPTICAL PROPERTIES OF N-TYPE INDIUM ARSENIDE IN FUNDAMENTAL ABSORPTION EDGE REGION [J].
DIXON, JR ;
ELLIS, JM .
PHYSICAL REVIEW, 1961, 123 (05) :1560-&
[6]   PARAMAGNETISM OF THE MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE [J].
FREY, T ;
MAIER, M ;
SCHNEIDER, J ;
GEHRKE, M .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (32) :5539-5545
[7]  
FURDYNA JK, 1986, DILUTED MAGNETIC SEM, V25
[8]  
ILLEGEMS M, 1975, J APPL PHYS, V46, P3059
[9]   DILUTED MAGNETIC III-V SEMICONDUCTORS [J].
MUNEKATA, H ;
OHNO, H ;
VONMOLNAR, S ;
SEGMULLER, A ;
CHANG, LL ;
ESAKI, L .
PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852
[10]   MAGNETIC-SUSCEPTIBILITY AND ELECTRON-PARAMAGNETIC-RES MEASUREMENTS IN CONCENTRATED SPIN-GLASSES - CD1-XMNXTE AND CD1-XMNXSE [J].
OSEROFF, SB .
PHYSICAL REVIEW B, 1982, 25 (11) :6584-6594