Ferromagnetism in diluted magnetic semiconductor heterojunction systems

被引：52

作者：

Lee, B

Jungwirth, T

MacDonald, AH

机构：

[1] Indiana Univ, Dept Phys, Bloomington, IN 47405 USA

[2] Univ Texas, Dept Phys, Austin, TX 78712 USA

[3] ASCR, Inst Phys, Prague 16253 6, Czech Republic

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2002年 / 17卷 / 04期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1088/0268-1242/17/4/311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diluted magnetic semiconductors (DMSs), in which magnetic elements are substituted for a small fraction of host elements a semiconductor lattice, can become ferromagnetic when doped. In this paper we discuss the physics of DMS ferromagnetism in systems with semiconductor heterojunctions. We focus on the mechanisms that cause of magnetic and magnetoresistive properties to depend on doping profiles, defect distributions, gate voltage and other system parameters that can in principle be engineered to yield desired results. We emphasize that hole densities at the Mn ion locations that exceed 10(20) cm(-3) are a necessary condition for high ferromagnetic transition temperatures in any geometry.

引用

页码：393 / 403

页数：11