A study of physical properties and gas-surface interaction of vanadium oxide thin films

被引:28
作者
Rella, R
Siciliano, P
Cricenti, A
Generosi, R
Girasole, M
Vanzetti, L
Anderle, M
Coluzza, C
机构
[1] CNR, Ist Studio Nuovi Mat Elettron IME, I-73100 Lecce, Italy
[2] CNR, Ist Struttura Mat ISM, I-00044 Frascati, Italy
[3] CMBM, I-38050 Trent, Italy
[4] Univ La Sapienza, INFM, Dipartimento Fis, I-00184 Rome, Italy
关键词
sensors; sputtering; surface composition; vanadium oxide;
D O I
10.1016/S0040-6090(99)00142-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of vanadium oxide were prepared by means of r.f, reactive sputtering. Their physical properties were studied as a function of the oxygen content in the sputtering atmosphere. Atomic force microscopy (AFM) and X-ray photoelectron spectromicroscopy (XPSM) investigations have been used for the study of the morphology and the chemical composition. In addition electrical characterisation in controlled atmosphere has been also performed for the evaluation of gas sensing properties, In particular, films deposited with 15% O-2 in the sputtering chamber were found to tx more resistive and to exhibit the best sensitivity when exposed to different gases. This behaviour has been explained taking into account the presence of different crystallographic phases and the influence of the polycrystalline nature of the films. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:254 / 259
页数:6
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