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Polarisation characteristics of InGaAlP/AlGaAs visible vertical cavity surface emitting lasers

被引：6
作者：
Chen, YH
Wilkinson, CI
Woodhead, J
Button, CC
David, JPR
Pate, MA
Robson, PN
机构：
[1] Dept. of Electron. and Elec. Eng., University of Sheffield, Sheffield S1 3JD, Mappin Street
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 06期
关键词：
visible semiconductor lasers; vertical cavity surface emitting lasers;
D O I：
10.1049/el:19960389
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first observation of polarisation selectivity in In0.48Ga1-xAlxP based visible vertical cavity surface emitting lasers grown on 10 degrees off axis (100) substrates is reported. All the measured devices show polarisation dominance in the <011> direction over a range of lasing wavelength (630 to 660nm). The slope efficiency in this direction is typically 2 to 20 times that in the orthogonal <0T1> direction. There is no evidence of polarisation switching with increased current.
引用
收藏
页码：559 / 560
页数：2
相关论文
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