CONTINUOUS-WAVE OPERATION OF 640-660NM SELECTIVELY OXIDIZED ALGAINP VERTICAL-CAVITY LASERS

被引：62

作者：

CHOQUETTE, KD

SCHNEIDER, RP

CRAWFORD, MH

GEIB, KM

FIGIEL, JJ

机构：

[1] Photonics Research Department, Sandia National Laboratories, Albuquerque

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 14期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; LASERS;

D O I：

10.1049/el:19950814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of AlGaInP visible vertical-cavity laser diodes fabricated using selective oxidation is reported. At room temperature, the lasers exhibit-continuous wave operation from 678 to 642 nm, with 642 nm being the shortest wavelength attained to date. In addition, these lasers possess the lowest threshold currents (660 mu A) and voltages (150 mV above photon energy) reported for visible vertical-cavity lasers.

引用

页码：1145 / 1146

页数：2

共 10 条

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