EFFICIENT ROOM-TEMPERATURE CONTINUOUS-WAVE ALGAINP/ALGAAS VISIBLE (670 NM) VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES

被引：30

作者：

SCHNEIDER, RP ^{[1
]}

CHOQUETTE, KD ^{[1
]}

LOTT, JA ^{[1
]}

LEAR, KL ^{[1
]}

FIGIEL, JJ ^{[1
]}

MALLOY, KJ ^{[1
]}

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 03期

关键词：

Continuous wave lasing - Gain guided geometry devices - Lateral heat sinking - Proton implants - Vertical cavity surface emitting laser diodes;

D O I：

10.1109/68.275475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 mum-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45-degrees-C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.

引用

页码：313 / 316

页数：4

共 18 条

[1] DRIFT LEAKAGE CURRENT IN ALGAINP QUANTUM-WELL LASERS [J].

BOUR, DP ;

TREAT, DW ;

THORNTON, RL ;

GEELS, RS ;

WELCH, DF .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (05) :1337-1343

[2]

CHOQUETTE KD, UNPUB

[3] INGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

GEELS, RS ;

CORZINE, SW ;

COLDREN, LA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1359-1367

[4] PERFORMANCE OF GAIN-GUIDED SURFACE EMITTING LASERS WITH SEMICONDUCTOR DISTRIBUTED BRAGG REFLECTORS [J].

HASNAIN, G ;

TAI, K ;

YANG, L ;

WANG, YH ;

FISCHER, RJ ;

WYNN, JD ;

WEIR, B ;

DUTTA, NK ;

CHO, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1377-1385

[5]

HUANG KF, 1993, ELECTRON LETT, V29, P1314

[6]

KUCHTA DM, UNPUB

[7]

LEAR KL, 1993, PHOTON TECHNOL LETT, V5, P972

[8] ELECTRICALLY INJECTED VISIBLE (639-661 NM) VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].

LOTT, JA ;

SCHNEIDER, RP .

ELECTRONICS LETTERS, 1993, 29 (10) :830-832

[9]

LOTT JA, UNPUB APPL PHYS LETT

[10]

LOTT JA, UNPUB ELECTRON LETT

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