Blends of semiconductor polymer and small molecular crystals for improved-performance thin-film transistors

被引：30

作者：

Russell, DM

Newsome, CJ

Li, SP

Kugler, T

Ishida, M

Shimoda, T

机构：

[1] Cambridge Res Lab Epson, Cambridge CB4 0FE, England

[2] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期

关键词：

D O I：

10.1063/1.2136356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Incorporating dihexyl-quarterthiophene (DH4T) into the active layer of a poly(3-hexylthiophene) thin-film transistor can enhance the mobility by a factor of 10. The DH4T concentration dependence shows the improvement in mobility is due to the formation of crystals within the blend film, which occur at a critical concentration of 29% DH4T. Application of percolation theory reveals that transport in blend devices is limited by the mobility of the poly (3-hexylthiophene)(P3HT) and by the crystal packing. With improved polymer performance, the mobility in blend films is expected to approach 1 cm(2)/V s. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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