Single-crystal organic field-effect transistors based on dibenzo-tetrathiafulvalene

被引:131
作者
Mas-Torrent, M
Hadley, P
Bromley, ST
Crivillers, N
Veciana, J
Rovira, C
机构
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[2] Univ Barcelona, Dept Quim Fis, E-08028 Barcelona, Spain
[3] Univ Barcelona, Ctr Especial Recerca Quim Teor, E-08028 Barcelona, Spain
[4] Parc Cient Barcelona, Barcelona 08028, Spain
[5] CSIC, Inst Ciencia Mat Barcelona, Cerdanyola Del Valles 08193, Spain
关键词
D O I
10.1063/1.1848179
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication and characterization of field-effect transistors based on single crystals of the organic semiconductor dibenzo-tetrathiafulvalene (DB-TTF). We demonstrate that it is possible to prepare very-good-quality DB-TTF crystals from solution. These devices show high field-effect mobilities typically in the range 0.1-1 cm(2)/V s. The temperature dependence was also studied revealing an initial increase of the mobility when lowering the temperature until it reached a maximum, after which the mobility decreased following a thermally activated behavior with activation energies between 50 and 60 meV. Calculations of the molecular reorganization energy and intermolecular transfer integrals for this material were also performed and are in agreement with the high mobility observed in this material. (C) 2005 American Institute of Physics.
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收藏
页码:012110 / 1
页数:3
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