Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

被引：23

作者：

Basantani, H. A. ^{[2
]}

Kozlowski, S. ^{[2
]}

Lee, Myung-Yoon ^{[3
]}

Li, J. ^{[4
]}

Dickey, E. C. ^{[4
]}

Jackson, T. N. ^{[1
,3
]}

Bharadwaja, S. S. N. ^{[1
]}

Horn, M. ^{[1
,2
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[4] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 26期

关键词：

SILICON;

D O I：

10.1063/1.4731240

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Thin films of VOx (1.3 <= x <= 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4m Omega.cm to 0.6 Omega.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731240]

引用

页数：4

共 23 条

[1]

[Anonymous], SIMNRA SOFTW

[2]

Bharadwaja SSN, 2010, CERAM TRANS, V221, P177

[3]

Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering [J].

Bharadwaja, S. S. N. ;

Venkatasubramanian, C. ;

Fieldhouse, N. ;

Ashok, S. ;

Horn, M. W. ;

Jackson, T. N. .

APPLIED PHYSICS LETTERS, 2009, 94 (22)

[4]

Chapman B., 1980, GLOW DISCHARGE PROCE, DOI DOI 10.1063/1.2914660

[5]

Vanadium oxide thin films deposited on silicon dioxide buffer layers by magnetron sputtering [J].

Chen, SH ;

Ma, H ;

Wang, SB ;

Shen, N ;

Xiao, J ;

Zhou, H ;

Zhao, XM ;

Li, Y ;

Yi, XJ .

THIN SOLID FILMS, 2006, 497 (1-2) :267-269

[6]

Cole B. E., 1994, U. S. patent, Patent No. [5,286,976, 5286976]

[7]

Structure, properties, and MEMS and microelectronic applications of vanadium oxides [J].

Darling, Robert B. ;

Iwanaga, Shiho .

SADHANA-ACADEMY PROCEEDINGS IN ENGINEERING SCIENCES, 2009, 34 (04) :531-542

[8]

Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

[9]

INFLUENCE OF ATOMIC VACANCIES ON PROPERTIES OF TRANSITION-METAL OXIDES .1. TI OXIDE AND V OXIDE [J].

GOODENOU.JB .

PHYSICAL REVIEW B, 1972, 5 (08) :2764-&

[10]

LATTICE SCATTERING CAUSES 1-F NOISE [J].

HOOGE, FN ;

VANDAMME, LKJ .

PHYSICS LETTERS A, 1978, 66 (04) :315-316

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