Epitaxial BaTiO3 films grown by aerosol MOCVD

被引：14

作者：

Gorbenko, OY ^{[1
]}

Kaul, AR ^{[1
]}

Wahl, G ^{[1
]}

机构：

[1] TECH UNIV CAROLO WILHELMINA BRAUNSCHWEIG,IOPW,D-38108 BRAUNSCHWEIG,GERMANY

来源：

CHEMICAL VAPOR DEPOSITION | 1997年 / 3卷 / 04期

关键词：

D O I：

10.1002/cvde.19970030406

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Communication: BaTiO3 thin films are promising for electronic and optoelectronic devices. Current growth techniques give rather low deposition rates for practical applications. Here epitaxial growth rates over 100 times higher have been achieved using aerosol CVD with surface diffusion enhancement in the presence of Bi-containing vapor. The AFM image shows a typical layer with an rms roughness of 12 nm.

引用

页码：193 / &

页数：5

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