Electrode influence on the polarization properties of BaTiO3 thin films prepared by off-axis laser deposition

被引:22
作者
Kaemmer, K
Huetz, H
Holzapfel, B
Haessler, W
Schultz, L
机构
[1] Inst. for Solid State and Mat. Res., 01171 Dresden
关键词
D O I
10.1088/0022-3727/30/4/004
中图分类号
O59 [应用物理学];
学科分类号
摘要
YBa2Cu3O7-x/BaTiO3/YBa2Cu3O7-x and Pt/BaTiO3/Au thin-film capacitors have been grown on SrTiO3(001) and MgO(001) substrates by off-axis laser deposition. Reflection high-energy electron diffraction (RHEED) and pole figures have revealed the epitaxial growth of the YBa2Cu3O7-x and BaTiO3 thin films. The BaTiO3 films with metal electrodes show only weak ferroelectric properties. Using YBa2Cu3O7-x as electrode material an essential improvement of the polarization behaviour could be achieved. YBa2Cu3O7-x/BaTiO3/YBa2Cu3O7-x heterostructures show a typical ferroelectric hysteresis loop with a remanent polarization P-r of 5 mu C cm(-2) and a coercive field E(c) of about 55 kV cm(-1) but with a relatively high leakage current density of about 1 mu A cm(-2) at an applied electrical field of 2 x 10(5) V m(-1). The improved polarization behaviour and the higher leakage current density of the all-perovskite structure is compared to those of the Pt/BaTiO3/Au system. The differences are discussed on the basis of a Schottky-like depletion layer formation at the BaTiO3-electrode interface.
引用
收藏
页码:522 / 526
页数:5
相关论文
共 26 条
[1]   EPITAXIAL-GROWTH OF SRTIO3 FILMS ON PT ELECTRODES AND THEIR ELECTRICAL-PROPERTIES [J].
ABE, K ;
KOMATSU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B) :2985-2988
[2]   INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES [J].
ALSHAREEF, HN ;
BELLUR, KR ;
KINGON, AI ;
AUCIELLO, O .
APPLIED PHYSICS LETTERS, 1995, 66 (02) :239-241
[3]   DIELECTRIC-PROPERTIES OF FINE-GRAINED BARIUM-TITANATE CERAMICS [J].
ARLT, G ;
HENNINGS, D ;
DEWITH, G .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1619-1625
[4]  
ARLT G, 1993, INTEGR FERROELECTR, V3, P247
[5]   FERROELECTRICS FOR NONVOLATILE RAMS [J].
BONDURANT, D ;
GNADINGER, F .
IEEE SPECTRUM, 1989, 26 (07) :30-33
[6]   ELECTRODE INFLUENCE ON THE CHARGE-TRANSPORT THROUGH SRTIO3 THIN-FILMS [J].
DIETZ, GW ;
ANTPOHLER, W ;
KLEE, M ;
WASER, R .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :6113-6121
[7]   OFF-AXIS LASER DEPOSITION OF YBA2CU3O7-DELTA THIN-FILMS [J].
HOLZAPFEL, B ;
ROAS, B ;
SCHULTZ, L ;
BAUER, P ;
SAEMANNISCHENKO, G .
APPLIED PHYSICS LETTERS, 1992, 61 (26) :3178-3180
[8]   DIELECTRIC-PROPERTIES OF (BA, SR)TIO3 THIN-FILMS DEPOSITED BY RF-SPUTTERING [J].
HORIKAWA, T ;
MIKAMI, N ;
MAKITA, T ;
TANIMURA, J ;
KATAOKA, M ;
SATO, K ;
NUNOSHITA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4126-4130
[9]   DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION [J].
HWANG, CS ;
PARK, SO ;
KANG, CS ;
CHO, HJ ;
KANG, HK ;
AHN, ST ;
LEE, MY .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9B) :5178-5183
[10]   ELECTRODE CONTACTS ON FERROELECTRIC PB(ZRXTI1-X)O-3 AND SRBI2TA2O9 THIN-FILMS AND THEIR INFLUENCE ON FATIGUE PROPERTIES [J].
LEE, JJ ;
THIO, CL ;
DESU, SB .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (08) :5073-5078