Reflectance of GaAs/(AlGa)As disordered superlattices

被引:6
作者
Lorusso, GF
Tassone, F
Capozzi, V
Perna, C
Martin, D
机构
[1] ECOLE POLYTECH FED LAUSANNE,INST PHYS THEOR,CH-1015 LAUSANNE,SWITZERLAND
[2] UNIV BARI,DIPARTMENTO FIS,I-70126 BARI,ITALY
[3] IST NAZL FIS MAT,UNITA BARI,I-70126 BARI,ITALY
[4] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND
关键词
disordered systems; quantum wells; electronic states (localized); light absorption and reflection;
D O I
10.1016/0038-1098(96)00110-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Reflectance spectra of GaAs/Al0.3Ga0.7As disordered superlattices (d-SL) are investigated. The experimental results are compared with numerical simulations obtained by means of transfer matrix method. The agreement between the measured spectra and the numerical calculations indicate the validity of the model we used, confirming the existence of a disordered-induced fine structure and the formation of sub-minibands of localized states in d-SL. The temperature dependence of the reflectance spectra evidenced an anomalous splitting of some features near the band edge, caused by space charge separation.
引用
收藏
页码:705 / 709
页数:5
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