Three different forms of hydrogen molecules in silicon

被引:26
作者
Kitajima, M
Ishioka, K
Nakanoya, K
Tateishi, S
Mori, T
Fukata, N
Murakami, K
Hishita, S
机构
[1] Natl Res Inst Met, Tsukuba, Ibaraki 305, Japan
[2] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 305, Japan
[3] Natl Inst Res Inorgan Mat, Tsukuba, Ibaraki 305, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 7A期
关键词
hydrogen molecule; trapping site; Si; vibrational frequency; Raman scattering;
D O I
10.1143/JJAP.38.L691
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied three different H-2 molecules in crystalline silicon using Raman scattering. The vibrational line at 3601 cm(-1) attributable to H-2 in Td site is observed both in n-type and p-type crystalline silicon. It is suggested from the hydrogenation-temperature dependence that the charge states and the sites of atomic hydrogen affects the formation of this type of H-2. H-2 in platelet observed at 4158 cm(-1) decreased in its intensity in Si+-implanted silicon. A new vibrational line is detected at 3822 cm(-1) , and attributed to H-2 trapped by hydrogen-related defects such as multivacancies produced by ion implantation.
引用
收藏
页码:L691 / L693
页数:3
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