Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy

被引：86

作者：

Arlery, M

Rouvière, JL

Widmann, F

Daudin, B

Feuillet, G

Mariette, H

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SP2M, F-38054 Grenoble 9, France

[2] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, F-38402 St Martin Dheres, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN/AlN heterostructures grown by molecular beam epitaxy are studied by high-resolution transmission electron microscopy (HRTEM). The two-dimensional/three-dimensional Stranski-Krastanow growth mode transition of GaN allows the formation of GaN quantum-dot structures embedded in AlN. The nature of the wetting layer associated with these dots is determined by quantitative HRTEM analysis, based on comparison between interplanar distortion profiles of experimental and simulated images. This study demonstrates a low intermixing between GaN and AlN materials. Such result is also evidenced for the GaN dots. (C) 1999 American Institute of Physics. [S0003-6951(99)00222-3].

引用

页码：3287 / 3289

页数：3