Status and prospects for SiC power MOSFETs

被引：425

作者：

Cooper, JA ^{[1
]}

Melloch, MR

Singh, R

Agarwal, A

Palmour, JW

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Cree Res Inc, Durham, NC 27703 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 04期

关键词：

metal-oxide semiconductor field effect transistors; (MOSFETs); power devices; silicon carbide;

D O I：

10.1109/16.992876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.

引用

页码：658 / 664

页数：7

共 41 条

[1]

AFANASEV VV, 1997, SILICON CARBIDE, V2, P321

[2]

[Anonymous], 1979, IEDM

[3]

Baliga BJ, 1996, INST PHYS CONF SER, V142, P1

[4] POWER SEMICONDUCTOR-DEVICE FIGURE OF MERIT FOR HIGH-FREQUENCY APPLICATIONS [J].

BALIGA, BJ .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :455-457

[5] Dopant activation and surface morphology of ion implanted 4H and 6H silicon carbide [J].

Capano, MA ;

Ryu, S ;

Melloch, MR ;

Cooper, JA ;

Buss, MR .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) :370-376

[6] Surface roughening in ion implanted 4H-silicon carbide [J].

Capano, MA ;

Ryu, S ;

Cooper, JA ;

Melloch, MR ;

Rottner, K ;

Karlsson, S ;

Nordell, N ;

Powell, A ;

Walker, DE .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) :214-218

[7]

CHUNG CY, 2000, P MAT RES SOC S MRS

[8] Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Di Ventra, M ;

Pantelides, ST ;

Feldman, LC ;

Weller, RA .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1713-1715

[9]

Cooper JA, 1997, PHYS STATUS SOLIDI A, V162, P305, DOI 10.1002/1521-396X(199707)162:1<305::AID-PSSA305>3.0.CO

[10]

2-7

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