Status and prospects for SiC power MOSFETs

被引：425

作者：

Cooper, JA ^{[1
]}

Melloch, MR

Singh, R

Agarwal, A

Palmour, JW

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Cree Res Inc, Durham, NC 27703 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 04期

关键词：

metal-oxide semiconductor field effect transistors; (MOSFETs); power devices; silicon carbide;

D O I：

10.1109/16.992876

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC electronic device technology has made rapid progress during the past decade. In this paper, we review the evolution of SiC power MOSFETs between 1992 and the present, discuss the current status of device development, identify the critical fabrication issues, and assess the prospects for continued progress and eventual commercialization.

引用

页码：658 / 664

页数：7