InP-InGaAsP high-speed traveling-wave electroabsorption modulators with integrated termination resistors

被引：61

作者：

Irmscher, S ^{[1
]}

Lewén, R

Eriksson, U

机构：

[1] Royal Inst Technol, Lab Photon & Microwave Engn, S-16440 Kista, Sweden

[2] Optill AB, SE-11794 Stockholm, Sweden

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 07期

关键词：

broad-band modulation; electroabsorption; optical fiber communication; traveling-wave modulator;

D O I：

10.1109/LPT.2002.1012386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Traveling-wave electroabsorption modulators for operation at 1.55 mum have been designed and fabricated. Devices of different lengths were characterized. Modulators with integrated termination resistors showed wide modulation bandwidths and excellent bandwidth-length products. A bandwidth of 43 GHz was measured for a 450-mum-long device, which corresponds to a 19.3-GHz.mm bandwidth length product. For a device length of 250 mum, a bandwidth of 67 GHz is extrapolated from measurements up to 45 GHz.

引用

页码：923 / 925

页数：3

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