A CdTe/PMeT photovoltaic structure formed by electrodeposition and processing

被引：19

作者：

Gamboa, SA ^{[1
]}

Sebastian, PJ

Mathew, X

Nguyen-Cong, H

Chartier, P

机构：

[1] Univ Nacl Autonoma Mexico, CIE, Solar H2 Fuel Cell Grp, Temixco 62580, Morelos, Mexico

[2] Univ Strasbourg 1, Fac Chim, Lab Electrochim & Chim Phys Corps Solide, Strasbourg, France

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 59卷 / 1-2期

关键词：

CdTe; thin films; electrodeposition;

D O I：

10.1016/S0927-0248(99)00036-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CdTe thin films were electrodeposited from an ethylene-glyco-based bath by the galvanostatic method. As-deposited and tellurized films were characterized by structural, optoelectronic and photoelectrochemical methods. The film stoichiometry improved after tellurization of the film at 300 degrees C by a technique called chemical vapor transport by Gas (CVTG) in a tubular furnace. Tellurized films showed near stoichiometry with p-type conductivity in the bulk and n-type surface conductivity. Schottky barrier type photovoltaic junctions were obtained using a heavily doped PMeT (poly-3(methylthiophene), prepared by electropolymerization, displaying nearly metallic behavior, and CdTe obtained by electrodeposition. A solar to electrical conversion efficiency of the order of 1% was obtained in the case of PMeT/CdTe junction. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：115 / 124

页数：10

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