PREPARATION AND PROPERTIES OF CDS/CDTE THIN-FILM SOLAR-CELL PRODUCED BY PERIODIC PULSE ELECTRODEPOSITION TECHNIQUE

CdS/CdTe solar cells have been prepared by periodic pulse electrodeposition method. 10.8% efficient cell was made with open circuit voltage (V(oc)) almost-equal-to 753 mV, short-circuit current (J(sc)) almost-equal-to 23.6 mA/cm2 and fill factor (FF) almost-equal-to 0.61. Current-voltage-temperature measurements showed the variation of ideality factor (A) from 1.88 at 344 K to 4.49 at 202 K whereas voltage factor (a) was almost constant above 276 K. The junction transport is possibly dominated by a tunneling mechanism. Capacitance measurements gave the value of diffusion potential as 1.2 eV, ionized charged density as 5.9 X 10(15) cm-3 and number of interface states (N(IS)) as 2.8 X 10(11) cm-2 eV-1 at zero volt bias. Measurements of open circuit voltage (V(OC)) with temperature gave the value of barrier height as 1.42 eV.