Time-resolved characteristics of phase conjugation in metal-semiconductor phase transition in VO2

被引：6

作者：

Berger, NK ^{[1
]}

Shuker, R

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 19期

关键词：

D O I：

10.1063/1.124009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The change in the reflection behavior of VO2 films for the 1.06 mu m wavelength at the semiconductor-metal phase transition was investigated. The nonlinearity caused by photoinduced transition was used for phase conjugation of a pulsed Nd:YAG laser. At 60 Hz Q-switching rate and average intensities of the pump and probe waves at 1 and 0.3 W/cm(2), respectively, the reflection coefficient of the conjugated wave was similar to 1%, the threshold energy density was 8 mJ/cm(2), the rise time of the signal was 30 ns. The response rate of the phase conjugation via the VO2 films is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)03319-7].

引用

页码：2770 / 2772

页数：3

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