VANADIUM DIOXIDE THIN-FILMS PREPARED BY CHEMICAL-VAPOR-DEPOSITION FROM VANADIUM(III) ACETYLACETONATE

Vanadium dioxide thin films were prepared by an atmospheric-pressure chemical vapour deposition method. The raw material was vanadium(III) acetylacetonate. Polycrystalline thin films were obtained at a reaction temperature of 500-degrees-C. Slow post-deposition cooling of the deposits on a substrate of fused quartz or sapphire single crystal yields vanadium dioxide films which are not mixed with other phases, i.e. V3O7 or V4O9. Optical and electrical switching behaviours strongly depend on film thickness. At a film thickness of about 300 nm the transition temperature showed a minimum value of 44-degrees-C.