TRANSITION LAYERS BETWEEN VO2 FILMS AND OXIDE SUBSTRATES

被引：11

作者：

REMKE, RL

WALSER, RM

BENE, RW

机构：

[1] UNIV TEXAS,ELECTR RES CTR,AUSTIN,TX 78712

[2] UNIV TEXAS,DEPT ELECT ENGN,AUSTIN,TX 78712

来源：

THIN SOLID FILMS | 1979年 / 61卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90502-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Auger electron spectroscopy reveals the existence of chemical transition layers at the interface between the substrate and chemically deposited VO2 films. Transition layers on sapphire and quartz substrates exhibited different characteristics resulting from the manner in which the dopant substrate atom was incorporated within the VO2 thin film. The effect of this layer is to modify the apparent characteristics of the VO2 film and even to dominate the electronic switching stability. © 1979.

引用

页码：73 / 82

页数：10

共 16 条

[1]

Berglund C. N., 1970, IEEE T ELECTRON DEV, V17, P137

[2]

BERGLUND CN, 1969, PHYS REV, V185, P1022, DOI 10.1103/PhysRev.185.1022

[3] THERMAL FILAMENTS IN VANADIUM DIOXIDE [J].