OPTICALLY EFFECTIVE INTERMEDIATE LAYER BETWEEN EPITAXIAL SILICON AND SPINEL OR SAPPHIRE

被引：9

作者：

KUHL, C ^{[1
]}

SCHLOTTERER, H ^{[1
]}

SCHWIDEFSKY, F ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 01期

关键词：

D O I：

10.1149/1.2132774

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：97 / 100

页数：4

共 18 条

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[4]

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[7]

HEZEL R, 1972, SIEMENS FORSCH ENTW, V1, P297

[8] OPTICAL INVESTIGATION OF DIFFERENT SILICON FILMS [J].

KUHL, C ;

SCHLOTTERER, H ;

SCHWIDEFSKY, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (11) :1496-1500

[9] SINGLE-CRYSTAL SILICON ON SAPPHIRE SUBSTRATE [J].

MANASEVIT, HM ;

SIMPSON, WI .

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[10]

MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

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