COMPARISON OF SEMICONDUCTING PROPERTIES OF THIN-FILMS OF SILICON ON SAPPHIRE AND SPINEL

被引：15

作者：

CULLEN, GW ^{[1
]}

CORBOY, JF ^{[1
]}

机构：

[1] RCA,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1149/1.2401684

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1345 / 1350

页数：6

共 29 条

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[2] BOLEKY EJ, 1970, ELECTRONICS 0720, P82
[3] SILICON-ON-SAPPHIRE EPITAXY BY VACUUM SUBLIMATION - LEED-AUGER STUDIES AND ELECTRONIC PROPERTIES OF FILMS
CHANG, CC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (03): : 500 - &
[4] CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107
[5] SILICON ON SPINEL - INTERACTION BETWEEN DEPOSITION CONSTITUENTS AND SUBSTRATE SURFACE
CULLEN, GW
DOUGHERTY, FC
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 230 - +
[6] COMPARISON OF HOLE MOBILITY AND EARLY GROWTH OF EPITAXIAL SILICON ON FLAME FUSION, FLUX, AND CZOCHRALSKI SPINEL
CULLEN, GW
WANG, CC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 640 - &
[7] EPITAXIAL GROWTH AND PROPERTIES OF SILICON ON ALUMINA-RICH SINGLE-CRYSTAL SPINEL
CULLEN, GW
GOTTLIEB, GE
WANG, CC
ZAININGER, KH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) : 1444 - +
[8] CULLEN GW, TO BE PUBLISHED
[9] CULLEN GW, 1973, CHEMICAL VAPOR DEPOS, P247
[10] Dumin D. J., 1968, Journal of Crystal Growth, V3-4, P214, DOI 10.1016/0022-0248(68)90133-4