Lead-free KNbO3 ferroelectric nanorod based flexible nanogenerators and capacitors

被引:111
作者
Jung, Jong Hoon [1 ,2 ]
Chen, Chih-Yen [1 ,3 ]
Yun, Byung Kil [2 ]
Lee, Nuri [4 ]
Zhou, Yusheng [1 ]
Jo, William [4 ]
Chou, Li-Jen [3 ]
Wang, Zhong Lin [1 ,5 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Inha Univ, Dept Phys, Inchon 402751, South Korea
[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30313, Taiwan
[4] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[5] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China
基金
新加坡国家研究基金会;
关键词
FREE PIEZOCERAMICS; NANOWIRE; NANOSTRUCTURES;
D O I
10.1088/0957-4484/23/37/375401
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In spite of high piezoelectricity, only a few one-dimensional ferroelectric nano-materials with perovskite structure have been used for piezoelectric nanogenerator applications. In this paper, we report high output electrical signals, i.e. an open-circuit voltage of 3.2 V and a closed-circuit current of 67.5 nA (current density 9.3 nA cm(-2)) at 0.38% strain and 15.2% s(-1) strain rate, using randomly aligned lead-free KNbO3 ferroelectric nanorods (similar to 1 mu m length) with piezoelectric coefficient (d(33) similar to 55 pm V-1). A flexible piezoelectric nanogenerator is mainly composed of KNbO3-poly(dimethylsiloxane) (PDMS) composite sandwiched by Au/Cr-coated polymer substrates. We deposit a thin poly(methyl methacrylate) (PMMA) layer between the KNbO3-PDMS composite and the Au/Cr electrode to completely prevent dielectric breakdown during electrical poling and to significantly reduce leakage current during excessive straining. The flexible KNbO3-PDMS composite device shows a nearly frequency-independent dielectric constant (similar to 3.2) and low dielectric loss (<0.006) for the frequency range of 10(2)-10(5) Hz. These results imply that short and randomly aligned ferroelectric nanorods can be used for a flexible high output nanogenerator as well as high-k capacitor applications by performing electrical poling and further optimizing the device structure.
引用
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页数:6
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