Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization

被引：17

作者：

Ishikawa, Mutsuo ^{[1
]}

Yazawa, Keisuke ^{[1
]}

Fujisawa, Takashi ^{[1
]}

Yasui, Shintaro ^{[1
]}

Yamada, Tomoaki ^{[1
]}

Hasegawa, Tomohito ^{[1
]}

Morita, Takeshi ^{[2
]}

Kurosawa, Minoru ^{[1
]}

Funakubo, Hiroshi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Univ Tokyo, Grad Sch Frontier Sci, Chiba 2778563, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 09期

关键词：

FABRICATION;

D O I：

10.1143/JJAP.48.09KA14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

KNbO3 films were grown at 240 degrees C by the hydrothermal method using KOH and Nb2O5 as source materials. Film thickness increased with reaction time up to 3 h, however decreased for longer reaction times. A 16-mu m-thick epitaxially grown KNbO3 film with {100}(pc) orientation were successfully grown on (100)(c)SrRuO3 parallel to SrTiO3 substrate for 3 h. The relative dielectric constant and dielectric loss at 100 kHz were 415 and 8%, respectively. Clear hysteresis loops originating from ferroelectricity were observed and the remanent polarization was 20 mu C/cm(2) at the maximum applied electric field of 220 kV/cm. The effective longitudinal piezoelectric constant, d(33)(eff) obtained using a laser Doppler velocimeter, was 86pm/V. (C) 2009 The Japan Society of Applied Physics

引用

页码：09KA141 / 09KA145

页数：5

共 21 条

[1]

CHENG CH, 1994, FERROELECTRICS, V152, P31

[2] Hydrothermal epitaxy of KNbO3 thin films and nanostructures [J].