Ion beam deposition and structural characterization of GMR spin valves

被引：18

作者：

Wang, SX ^{[1
]}

Bailey, WE ^{[1
]}

Surgers, C ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,SOLID STATE LAB,STANFORD,CA 94305

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1997年 / 33卷 / 03期

关键词：

ion-beam applications; magnetic recording/reading heads; magnetoresistive materials/devices;

D O I：

10.1109/20.573860

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NiO exchange-biased ''bottom'' spin valves of the type NiO/NiFe/Co/Cu/Co/NiFe and FeMn exchange-biased ''top'' spin valves of the type NiFe/Co/Cu/Co/NiFe/FeMn were deposited by ion-beam deposition (except the NiO layer). Their magnetic properties, magneto-transport, and microstructures are characterized and compared with corresponding GMR spin valves deposited by de magnetron sputtering, High-resolution cross-sectional transmission electron microscopy and X-ray diffraction reveal microstructural differences between ion-beam-deposited and de magnetron sputtered spin valves. In particular, film texture, surface morphology, GMR ratio, exchange bias, interlayer coupling strength, and coercivity vary widely, but property-structure-processing correlation can be identified, A GMR ratio of similar to 9.7% was obtained on random textured NiO exchange-biased bottom spin valves by ion-beam deposition.

引用

页码：2369 / 2374

页数：6

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