Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy

Wurzite or hexagonal GaNAs epitaxial alloy samples on the N-rich side with high As content were grown by metalorganic vapor phase epitaxy. The GaNAs layers had specular surfaces and the single-phase epitaxial nature of the alloy samples was confirmed by X-ray diffraction. The As incorporation into the GaNAs layers increased through both a decrease in the growth temperature and V/III ratio. These observed trends Were similar to that found in other III-V alloy systems which exhibit a large miscibility gap. The anion incorporation was limited kinetically Under the conditions of the low V/III ratio. By achieving high As content within the miscibility gap through these techniques, the GaNAs alloy system becomes a promising candidate for extending the wavelength range of GaN-based semiconductors. (C) 2004 Elsevier B.V. All rights reserved.