Double-gated Spindt emitters with stacked focusing electrode

被引：26

作者：

Dvorson, L ^{[1
]}

Akinwande, AI ^{[1
]}

机构：

[1] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 01期

关键词：

D O I：

10.1116/1.1428278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Arrays of molybdenum field emission cones with integrated focusing electrode (IFE-FEA) were studied as a potential device structure for field emission displays (FEDs) that achieve high brightness, high luminous efficiency, and longer lifetime, without loss of resolution. Device operation and optimization were examined both qualitatively and analytically. Double-gated devices were fabricated using the Spindt cone process. Extensive electrical characterization of IFE-FEAs was conducted. Preliminary optical measurements demonstrated the desired focusing effect. (C) 2002 American Vacuum Society.

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页码：53 / 59

页数：7

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