Defect-tolerant and directional wet-etch systems for using monolayers as resists

被引:69
作者
Geissler, M [1 ]
Schmid, H [1 ]
Bietsch, A [1 ]
Michel, B [1 ]
Delamarche, E [1 ]
机构
[1] IBM Corp, Res, Zurich Res Lab, CH-8803 Ruschlikon, Switzerland
关键词
D O I
10.1021/la0155909
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We developed strategies based on self-assembly principles to etch substrates patterned with monolayer resists with high selectivity and etch directionality. Our strategies exploit the defined composition and order of these ultrathin resists and overcome their imperfections. Defects in a monolayer can be healed by additives present in an etch bath. Alternatively, large molecules that cannot diffuse through defects can be employed as etchants. It is also possible to taper structures using the competition between etching and the side-growth of self-assembling etch barrier, nucleating from the originally patterned monolayer. The application of these concepts lets defect-sensitive monolayers become robust and versatile resists, which should promote their acceptance and use in microtechnology.
引用
收藏
页码:2374 / 2377
页数:4
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