Effect of boron incorporation on the structure of polycrystalline diamond films

被引：20

作者：

Brunet, F ^{[1
]}

Deneuville, A ^{[1
]}

Germi, P ^{[1
]}

Pernet, M ^{[1
]}

Gheeraert, E ^{[1
]}

Mambou, J ^{[1
]}

机构：

[1] UNIV GRENOBLE 1,CNRS,ETUD PROPRIETES ELECT SOLIDES LAB,F-38042 GRENOBLE 9,FRANCE

来源：

关键词：

diamond film; boron doping; X-ray; structure;

D O I：

10.1016/S0925-9635(96)00607-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The X-ray diffraction peaks of undoped and boron-doped polycrystalline diamond films have been recorded up to 8 x 10(20) B-cm(-3). The lattice parameter varies slightly according to the crystallographic direction [111], [220] and [311] of the crystallite perpendicularly to the substrate. For undoped films, it is lower in the [220] direction. In all directions, we measure a large expansion coefficient of the diamond lattice versus the boron incorporation [B]. Microstrains appear independent of [B], while coherent domains have a maximum size around 3 x 10(19) B cm(-3). We suggest contribution of both the different of size of boron and carbon atoms (Vegard's law) and of holes in the impurity band of boron (but with a positive ''deformation potential'') to describe the lattice expansion from boron incorporation. (C) 1997 Elsevier Science S.A.

引用

页码：774 / 777

页数：4

共 20 条

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