Band gaps and lattice parameters of 0.9 μm thick InxGa1-xN films for 0≤x≤0.140

The c(0) lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 mum thick InxGa1-xN films with x=0, 0.045, 0.085, and 0.140 were examined. The c(0) lattice parameter followed Vegard's law using c(0)=0.5185 nm for GaN and c(0)=0.569 nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E-g=3.41-7.31x+14.99x(2) for 0less than or equal toxless than or equal to0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses. (C) 2002 American Institute of Physics.