Exciton localization and the Stokes' shift in InGaN epilayers

被引：288

作者：

Martin, RW ^{[1
]}

Middleton, PG

O'Donnell, KP

Van der Stricht, W

机构：

[1] Univ Strathclyde, Dept Phys & Appl Phys, Glasgow G4 0NG, Lanark, Scotland

[2] State Univ Ghent, IMEC, Dept Informat Technol, Ghent, Belgium

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.123275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers. A working definition of the form of the absorption edge for alloys is proposed, which allows a unique definition of the Stokes' shift. A linear dependence of the Stokes' shift on the emission peak energy is then demonstrated for InGaN using experimental spectra of both diode and epilayer samples, supplemented by data from the literature. In addition, the broadening of the absorption edge is shown to increase as the emission peak energy decreases. These results are discussed in terms of the localization of excitons at highly indium-rich quantum dots within a phase-segregated alloy. (C) 1999 American Institute of Physics. [S0003-6951(99)02402-X].

引用

页码：263 / 265

页数：3

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