Large band gap bowing of InxGa1-xN alloys

被引：209

作者：

McCluskey, MD ^{[1
]}

Van de Walle, CG ^{[1
]}

Master, CP ^{[1
]}

Romano, LT ^{[1
]}

Johnson, NM ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 21期

关键词：

D O I：

10.1063/1.121072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band gap measurements have been performed on strained InxGa1-xN epilayers with x less than or equal to 0.12. The experimental data indicate that the bowing of the band gap is much larger than commonly assumed. We have performed first-principles calculations for the band gap as a function of alloy composition and find that the bowing is strongly composition dependent. lit x=0.125 the calculated bowing parameter is b=3.5 eV, in good agreement with the experimental values. (C) 1998 American Institute of Physics.

引用

页码：2725 / 2726

页数：2

共 18 条

[1] Optical anisotropy of excitons in strained GaN epilayers grown along the [10(1)over-bar-0] direction
Gil, B
Alemu, A
[J]. PHYSICAL REVIEW B, 1997, 56 (19) : 12446 - 12453
[2] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
MONEMAR, B
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 676 - 681
[3] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES
NAKAMURA, S
SENOH, N
IWASA, N
NAGAHAMA, SI
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A): : L797 - L799
[4] III-V nitride based light-emitting devices
Nakamura, S
[J]. SOLID STATE COMMUNICATIONS, 1997, 102 (2-3) : 237 - +
[5] InGaN-based multi-quantum-well-structure laser diodes
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Kiyoku, H
Sugimoto, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B): : L74 - L76
[6] ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF NATIVE DEFECTS IN GAN
NEUGEBAUER, J
VAN DE WALLE, CG
[J]. PHYSICAL REVIEW B, 1994, 50 (11): : 8067 - 8070
[7] NItride-based semiconductors for blue and green light-emitting devices
Ponce, FA
Bour, DP
[J]. NATURE, 1997, 386 (6623) : 351 - 359
[8] ROMANO LT, 1996, 3 GAN WORKSH ST LOUI
[9] ROMANO LT, UNPUB APPL PHYS LETT
[10] Strain effects on excitonic transitions in GaN: Deformation potentials
Shan, W
Hauenstein, RJ
Fischer, AJ
Song, JJ
Perry, WG
Bremser, MD
Davis, RF
Goldenberg, B
[J]. PHYSICAL REVIEW B, 1996, 54 (19) : 13460 - 13463

← 1 2 →