Optical anisotropy of excitons in strained GaN epilayers grown along the [10(1)over-bar-0] direction

被引：56

作者：

Gil, B

Alemu, A

机构：

[1] Centre National de la Recherche Scientifique, Groupe d’Etude des Semiconducteurs, Université de Montpellier II, 34095 Montpellier Cedex 5

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.56.12446

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the spectroscopy of is excitons in GaN epilayers grown with biaxial stress on [10(1)over-bar0]-oriented M plane. In contrast to the growth on conventional C-plane substrates, for which we predicted five radiative excitons, we now demonstrate the existence of nine radiative transitions. A, B, and C excitons are now radiative for any polarization case, due to the crossed configuration of the wurtzite crystal field and the built-in strain one. In particular, the A exciton is significantly coupled to the electromagnetic field in pi polarization (E parallel to c). Strong in-plane anisotropy of the optical response is predicted and computed.

引用

页码：12446 / 12453

页数：8

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