Internal structure and oscillator strengths of excitons in strained alpha-GaN

被引：82

作者：

Gil, B

Briot, O

机构：

[1] Centre National del la Recherche Scientifique Groupe dșEtude des Semiconducteurs Universitéde Montpellier II, 34095 Montpellier Cedex 5

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.55.2530

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the excitonic exchange interaction in alpha-GaN, and find it to be about 2 meV. A theoretical modelling of excitons is performed, and the oscillator strengths of radiative levels are calculated as a function of strain for (0001)-grown epilayers. In particular, we find that the strength of optical transitions are extremely sensitive to the residual strain field in view of the small value of the spin-orbit interaction. Our calculation shows agreement with low-temperature reflectance investigations in GaN epilayers grown on sapphire substrates.

引用

页码：2530 / 2534

页数：5

共 36 条

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