DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN

被引：156

作者：

DRECHSLER, M

HOFMANN, DM

MEYER, BK

DETCHPROHM, T

AMANO, H

AKASAKI, I

机构：

[1] NAGOYA UNIV, SCH ENGN, DEPT ELECTR, CHIKUSA KU, NAGOYA, AICHI 46801, JAPAN

[2] MEIJO UNIV, DEPT ELECT & ELECTR ENGN, TEMPAKU KU, NAGOYA, AICHI 468, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9B期

关键词：

BAND-STRUCTURE; CARRIER TRANSPORT; GAN;

D O I：

10.1143/JJAP.34.L1178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron effective mass in hexagonal GaN films grown by metal organic vapor phase epitaxy on sapphire substrates is determined by cyclotron resonance experiments. Its value is m(p)* = 0.22 +/- 0.005 m(o). Taking polaron effects into account the band edge mass is m(b)* = 0.20 +/- 0.005 m(o). From the resonance linewidth a mobility of 3500 cm(2)/V . s at 6 K is obtained.

引用

页码：L1178 / L1179

页数：2

共 11 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].

BARKER, AS ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1973, 7 (02) :743-750

[3]

BOER KW, 1990, SURVEY SEMICONDUCTOR, P552

[4] ELECTRON-SPIN-RESONANCE STUDIES OF DONORS IN WURTZITE GAN [J].

CARLOS, WE ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN .

PHYSICAL REVIEW B, 1993, 48 (24) :17878-17884

[5]

Edgar J.H., 1994, PROPERTIES GROUP 3 N, P101

[6] OPTICAL-PROPERTIES OF ZNSE EPILAYERS AND FILMS [J].

GUTOWSKI, J ;

PRESSER, N ;

KUDLEK, G .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1990, 120 (01) :11-59

[7] CYCLOTRON RESONANCE [J].

LAX, B ;

MAVROIDES, JG .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1960, 11 :261-400

[8] SHALLOW DONORS IN GAN - THE BINDING-ENERGY AND THE ELECTRON EFFECTIVE-MASS [J].

MEYER, BK ;

VOLM, D ;

GRABER, A ;

ALT, HC ;

DETCHPROHM, T ;

AMANO, A ;

AKASAKI, I .

SOLID STATE COMMUNICATIONS, 1995, 95 (09) :597-600

[9] INSITU MONITORING AND HALL MEASUREMENTS OF GAN GROWN WITH GAN BUFFER LAYERS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :5543-5549

[10]

PETERS FM, SOLID STATE PHYS, V38

← 1 2 →