Aluminium doping induced enhancement of p-d coupling in ZnO

被引:12
作者
Cong, GW
Peng, WQ
Wei, HY
Liu, XL
Wu, JJ
Han, XX
Zhu, QS
Wang, ZG
Ye, ZZ
Lu, JG
Zhu, LP
Qian, HJ
Su, R
Hong, CH
Zhong, J
Ibrahim, K
Hu, TD
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[3] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
基金
英国医学研究理事会;
关键词
D O I
10.1088/0953-8984/18/11/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Valence-band type Auger lines in Al doped and undoped ZnO were comparatively studied with the corresponding core level x-ray photoelectron spectrography (XPS) spectra as references. Then the shift trend of energy levels in the valence band was that p and p-s-d states move upwards but e and p-d states downwards with increasing Al concentration. The decreased energy of the Zn 3d state is larger than the increased energy of the 0 2p state, indicating the lowering of total energy. This may indicate that Al doping could induce the enhancement of p-d coupling in ZnO, which originates from stronger Al-O hybridization. The shifts of these states and the mechanism were confirmed by valence band XPS spectra and 0 K-edge x-ray absorption spectrography (XAS) spectra. Finally, some previously reported phenomena are explained based on the Al doping induced enhancement of p-d coupling.
引用
收藏
页码:3081 / 3087
页数:7
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